Total Solution Provider
WDX™ Silicon Carbide Materials are useful in a wide variety of industries and applications such as semiconductor processing parts including focus and edge rings, wafer boats, and arms, sealing components, blasting nozzles, and armor plates. Components made of WDX™ Silicon Carbide Materials have an excellent track record over decades of use, and applications for these versatile materials continue to expand. Our experienced scientists work to develop silicon carbide-based solutions tailored to customers' requirements.
The Differences among Silicon Carbide Grades
WDX offers six grades of silicon carbide, each exhibiting various properties. Differences are described below.
The multi-purpose grade: WDX™ Silicon Carbide Grade S
WDX™ SIC-S is a sintered alpha silicon carbide material designed for multi-purpose applications. The material has good chemical resistance, high hardness, excellent flexural strength, and high thermal conductivity properties.
The electrically conductive grade: WDX™ Silicon Carbide Grade D
WDX™ SIC-D is a sintered alpha silicon carbide material designed for electrically conductive materials
applications and low specific weight WDX™ SIC-D has proven highly effective in complex-shaped components and semiconductor processing parts.
The CVD-SIC grade: WDX™ Silicon Carbide Grade CVD-A
WDX produces CVD grade silicon carbide material which outperforms any silicon carbide in plasma environments. WDX™ CVD-A extends the life of your manufacturing equipment, eliminates contamination and increases yields.
The Reaction-Bonded Silicon Carbide grades: L-RSIC, M-RSIC, and H-RSIC
WDX produces three different reaction-bonded silicon carbide grades, L-RSIC, M-RSIC, and H-RSIC. The RSIC grades are designed specifically for optimum performance in focusledge ring applications for semiconductor processing. The electrical resistivities of LRSC, M-RSIC, and H-RSIC are on the orders of 10°, 10, and 10-1 cm, respectively. Compared to other reaction-bonded silicon carbide materials on the market, RSC materials from WDX are characterized by a low free Si contents and homogeneous microstructures, thus higher flexural strengths. The RSIC materials show good performance as seals for use in pumps.
Typical Material Properties of WDX™ Silicon Carbide
Property | Unit | Typical Values | |||||
---|---|---|---|---|---|---|---|
L-RSiC | M-RSiC | H-RSiC | S-SiC | D-SiC | CVD-A | ||
Density | g/cm³ | 2.93 | 3.01 | 3.08 | 3.18 | 2.90 | 3.21 |
Flexural Strength | MPa | 420 | 550 | 500 | 550 | 430 | 500 |
Vickers Hardness | GPa | 20.8 | 26.4 | 20.7 | 27.6 | 24.3 | - |
Poisson’s Ratio | - | 0.173 | 0.179 | 0.27 | 0.46 | 0.132 | - |
Thermal Conductivity (@25℃) | W/m∙K | 119 | 164 | 169 | 150 | 124 | 267 |
Specific Heat (@100℃) | J/g∙K | 0.657 | 0625 | 0.763 | 0.679 | 0.778 | - |
Thermal Expansion | 10-6·K-1 | 4.4 | 4.11 | 4.1 | 4.1 | 4.9 | - |
Volume Resistivity (@25℃) | Ohm∙cm | ~10-3 | ~10-2 | ~10-1 | 106~109 | 0.2 | < 10 > 1000 |
WDX™ L-RSIC
WDX™ CVD-A
Product Name | SiC Ring | Susceptor | SiC Boat |
---|---|---|---|
Product Description | Parts to maintain etching uniformity by keeping plasma consistent at the outer boundaries of the wafer |
Thin Film parts of wafer in Epi process |
Parts that safely position several wafers in order to coat thin oxide film during process |
Application | Etcher process | Thin Film process | CVD process, Diffusion process, etc. |
Type | Focus Ring, Insert Ring, Edge Ring (Hot, cool) |
8” / 12” Susceptor | Baffle Boat, 8” / 12” Long Boat |